Fabrication and characterization of Pt/SrBi2Ta2O9(SBT)/CeO2/Si metal ferroelectric insulator semiconductor field effect transistor (MFISFET) memory by using the inductively coupled plasma reactive ion etching (ICP RIE) process

Authors
Sun Il ShimJung Ho ParkYoung Suk KwonKim, Seong IlKim, Yong Tae
Citation
APHYS2003-11
Keywords
ferroelectric; FRAM; MFISFET; ICP; RIE; etching
URI
https://pubs.kist.re.kr/handle/201004/105957
Appears in Collections:
KIST Conference Paper > Others
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE