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dc.contributor.authorSun Il Shim-
dc.contributor.authorYoung Suk Kwon-
dc.contributor.authorKim, Seong Il-
dc.contributor.authorKim, Yong Tae-
dc.contributor.authorHo Jung Chang-
dc.contributor.authorJung Ho Park-
dc.date.accessioned2024-01-13T11:01:03Z-
dc.date.available2024-01-13T11:01:03Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/105958-
dc.languageEnglish-
dc.titleEtching characteristics of SrBi2Ta2O9(SBT) and CeO2 layers by using the inductively coupled plasma reactive ion etching (ICP RIE) process and fabrication of metal ferroelectric insulator semiconductor field effect transistor (MFISFET)-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationThe 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Mate, pp.164-
dc.citation.titleThe 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Mate-
dc.citation.startPage164-
dc.citation.endPage164-
dc.citation.conferencePlaceKO-
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