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dc.contributor.authorDong Myong Kim-
dc.contributor.authorLee, Jung Il-
dc.contributor.authorHwe-Jong Kim-
dc.date.accessioned2024-01-13T11:01:28Z-
dc.date.available2024-01-13T11:01:28Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/105986-
dc.languageEnglish-
dc.subjectPhoto-response-
dc.subjectGate leakage-
dc.subjectHigh-electron mobility transistors-
dc.titleSub-bandgap photonic characterization of the gate leakage in pseudomorphic high-electron mobility transistors-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationThe First International Symposium on Future Issues in Nano-optoelectronics, pp.40 - 41-
dc.citation.titleThe First International Symposium on Future Issues in Nano-optoelectronics-
dc.citation.startPage40-
dc.citation.endPage41-
dc.citation.conferencePlaceKO-
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