DSpace at KIST: Characteristics of hydrogen ion implantation for SOI fabrication

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DC Field	Value	Language
dc.contributor.author	김형권	-
dc.contributor.author	Byun Young Tae	-
dc.contributor.author	KIM TAE GON	-
dc.contributor.author	Kim Sun Ho	-
dc.contributor.author	한상국	-
dc.date.accessioned	2024-01-13T11:03:57Z	-
dc.date.available	2024-01-13T11:03:57Z	-
dc.date.created	2021-09-29	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/106144	-
dc.language	English	-
dc.subject	SOI 제작	-
dc.subject	수소 이온 주입	-
dc.subject	TRIM 시뮬레이터	-
dc.subject	RBS channeling spectrum	-
dc.title	Characteristics of hydrogen ion implantation for SOI fabrication	-
dc.title.alternative	SOI 제작을 위한 수소 이온 주입 특성	-
dc.type	Conference	-
dc.description.journalClass	2	-
dc.identifier.bibliographicCitation	한국광학회 2003 년도 하계학술발표회, pp.230 - 231	-
dc.citation.title	한국광학회 2003 년도 하계학술발표회	-
dc.citation.startPage	230	-
dc.citation.endPage	231	-
dc.citation.conferencePlace	KO	-

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