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dc.contributor.authorJ.H. Lee-
dc.contributor.authorChoi Won Jun-
dc.contributor.authorPark Young Ju-
dc.contributor.authorHan Il Ki-
dc.contributor.authorCho Woon Jo-
dc.contributor.authorLee Jung Il-
dc.contributor.authorE.K. Kim-
dc.date.accessioned2024-01-13T12:03:45Z-
dc.date.available2024-01-13T12:03:45Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/106663-
dc.languageEnglish-
dc.titleImpurity free vacancy disordering of self-assembled InGaAs quantum dots by using PECVD-grown SiO ₂ and SiNx capping films.-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation2nd International Conference on Semiconductor Quantum Dots (QD2002), pp.159-
dc.citation.title2nd International Conference on Semiconductor Quantum Dots (QD2002)-
dc.citation.startPage159-
dc.citation.endPage159-
dc.citation.conferencePlaceJA-
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