DSpace at KISTKIST Conference PaperOthers

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dc.contributor.authorJunggeun Jhin-
dc.contributor.authorJaekyun Kim-
dc.contributor.authorMingu Kang-
dc.contributor.authorDongjin Byun-
dc.contributor.authorPark Young Ju-
dc.contributor.authorEui Kwan Koh-
dc.date.accessioned2024-01-13T12:04:20Z-
dc.date.available2024-01-13T12:04:20Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/106701-
dc.languageEnglish-
dc.titleThe postannealing effects of GaN epilayer grown on N-ion implanted sapphire substrate-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationThe 11th Seoul International Symposium on the Physics of Semiconductors and Applications-2002, pp.282-
dc.citation.titleThe 11th Seoul International Symposium on the Physics of Semiconductors and Applications-2002-
dc.citation.startPage282-
dc.citation.endPage282-
dc.citation.conferencePlaceKO-
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