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dc.contributor.authorJ.K.Kim-
dc.contributor.authorPark, Young Ju-
dc.contributor.authorD.Byun-
dc.contributor.authorE.K.Koh-
dc.date.accessioned2024-01-13T12:30:34Z-
dc.date.available2024-01-13T12:30:34Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/106726-
dc.languageEnglish-
dc.titleH₂/N₂ mixing plasma pretreatment of sapphire for GaN deposition-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationThe 11th Seoul International Symposium on the Physics of Semiconductors and Applications-2002, pp.62-
dc.citation.titleThe 11th Seoul International Symposium on the Physics of Semiconductors and Applications-2002-
dc.citation.startPage62-
dc.citation.endPage62-
dc.citation.conferencePlaceKO-
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