DSpace at KISTKIST Conference PaperOthers

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dc.contributor.authorB.H.Choi-
dc.contributor.authorS.H.Son-
dc.contributor.authorK.H.Cho-
dc.contributor.authorS.W.Hwang-
dc.contributor.authorD.Ahn-
dc.contributor.authorY.M.Park-
dc.contributor.authorPark Young Ju-
dc.contributor.authorE.K.Kim-
dc.date.accessioned2024-01-13T12:31:05Z-
dc.date.available2024-01-13T12:31:05Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/106758-
dc.languageEnglish-
dc.titleSingle electron tunneling effects in a heavily doped n+ GaAs quantum dot-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation26th International conference on physcis of semiconductor, pp.247-
dc.citation.title26th International conference on physcis of semiconductor-
dc.citation.startPage247-
dc.citation.endPage247-
dc.citation.conferencePlaceUK-
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