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dc.contributor.authorKIM CHUN KEUN-
dc.contributor.author김익수-
dc.contributor.author최훈상-
dc.contributor.authorKim Seong Il-
dc.contributor.author이창우-
dc.contributor.authorKim Yong Tae-
dc.date.accessioned2024-01-13T12:31:39Z-
dc.date.available2024-01-13T12:31:39Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/106794-
dc.languageEnglish-
dc.subjectBi 층상구조-
dc.subject수소열처리-
dc.subject수소열화-
dc.subject쿠리온도-
dc.subject계면트랩농도-
dc.subject이리듐전극-
dc.subjecthydrogen annealing-
dc.subjectBi-layered perovskite-
dc.subjectinterface trap-
dc.subjectcurie temperature-
dc.titleEffect of hydrogen annealing on electrical properties of Bi-layered perovskite thin films-
dc.title.alternativeBi 층상 페로브스카이트 박막의 전기적 특성에 미치는 수소 열처리효과-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation2002 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2, pp.155 - 158-
dc.citation.title2002 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2-
dc.citation.startPage155-
dc.citation.endPage158-
dc.citation.conferencePlaceJA-
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