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dc.contributor.author최훈상-
dc.contributor.author조금석-
dc.contributor.authorKim Yong Tae-
dc.contributor.author이관-
dc.contributor.author이종한-
dc.contributor.authorKim Seong Il-
dc.contributor.author최인훈-
dc.date.accessioned2024-01-13T13:34:17Z-
dc.date.available2024-01-13T13:34:17Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/107496-
dc.subjectSBN-
dc.title.alternativePt/SrBi2Nb2O9/Si 게이트 구조의 전기적 특성에 대한 Bi 함량의 효과-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitation2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Device, pp.229 - 234-
dc.citation.title2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Device-
dc.citation.startPage229-
dc.citation.endPage234-
dc.citation.conferencePlaceKO-
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