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dc.contributor.authorSung-Kyun Lee-
dc.contributor.author최인훈-
dc.contributor.author이철의-
dc.contributor.authorKim Yong Tae-
dc.contributor.authorKIM CHUN KEUN-
dc.date.accessioned2024-01-13T14:01:18Z-
dc.date.available2024-01-13T14:01:18Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/107573-
dc.languageEnglish-
dc.subjectferroelectric gate structure-
dc.titleCorrelation between charge injection and memory window in the ferroelectric gate stack structures-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitation2001 Korea-japan Joint Workshop on Advanced Semiconductor Process and Equipment, pp.13 - 15-
dc.citation.title2001 Korea-japan Joint Workshop on Advanced Semiconductor Process and Equipment-
dc.citation.startPage13-
dc.citation.endPage15-
dc.citation.conferencePlaceKO-
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