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dc.contributor.author심현상-
dc.contributor.authorKim Yong Tae-
dc.contributor.author김동준-
dc.contributor.author전형탁-
dc.contributor.author추상현-
dc.contributor.author차국현-
dc.date.accessioned2024-01-13T14:30:36Z-
dc.date.available2024-01-13T14:30:36Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/107795-
dc.languageEnglish-
dc.subjectlow-k-
dc.titleA method of improving dielectric constant and adhesion strength of methysilsesquioxyane by using a NH3 plasma treatment-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationMaterial Research Society (MRS) 2001 spring Meeting, pp.231.-
dc.citation.titleMaterial Research Society (MRS) 2001 spring Meeting-
dc.citation.startPage231.-
dc.citation.endPage231.-
dc.citation.conferencePlaceUS-
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