DSpace at KISTKIST Conference PaperOthers

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dc.contributor.author최훈상-
dc.contributor.authorKim Yong Tae-
dc.contributor.authorM. Ischida-
dc.contributor.author최인훈-
dc.contributor.author이창우-
dc.date.accessioned2024-01-13T14:32:50Z-
dc.date.available2024-01-13T14:32:50Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/107937-
dc.languageEnglish-
dc.subjectNDRO-FRAM-
dc.subjectSrBi2Ta2O9-
dc.subjectbuffer layer-
dc.subjectAl2O3-
dc.titleEL-MoM2 effects of Ta2O5 and Al2O3 buffer insulators on electrical characteristics of Pt/SrBi2Ta2O9/Si gate structure-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation2001 AVS 48th International Symposium, October 28-November 2, 2001 Moscone Center and Marriott Hotel, pp.7-
dc.citation.title2001 AVS 48th International Symposium, October 28-November 2, 2001 Moscone Center and Marriott Hotel-
dc.citation.startPage7-
dc.citation.endPage7-
dc.citation.conferencePlaceUS-
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