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dc.contributor.authorKim Seong Il-
dc.contributor.authorJewon Kim-
dc.contributor.authorPARK YOUNG KYUN-
dc.contributor.authorKim Yong Tae-
dc.date.accessioned2024-01-13T15:04:49Z-
dc.date.available2024-01-13T15:04:49Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/108299-
dc.languageEnglish-
dc.subjectselective epitaxy-
dc.subjectquantum wire-
dc.subjectMOCVD-
dc.subjectGaAs-
dc.subjectInGaAs-
dc.titleFabrication of noble quantum wire structures grown by low pressure MOCVD using selective area epitaxy-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationThe International Conference on Electrical Engineering 2000, pp.50 - 53-
dc.citation.titleThe International Conference on Electrical Engineering 2000-
dc.citation.startPage50-
dc.citation.endPage53-
dc.citation.conferencePlaceJA-
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