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Fabrication of noble quantum wire structures grown by low pressure MOCVD using selective area epitaxy

Authors

Kim Seong Il; Jewon Kim; PARK YOUNG KYUN; Kim Yong Tae

Citation

The International Conference on Electrical Engineering 2000, pp.50 - 53

Keywords

selective epitaxy; quantum wire; MOCVD; GaAs; InGaAs

URI

https://pubs.kist.re.kr/handle/201004/108299

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KIST Conference Paper > Others

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