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dc.contributor.author최훈상-
dc.contributor.authorKim Yong Tae-
dc.contributor.author김은홍-
dc.contributor.author최인훈-
dc.date.accessioned2024-01-13T15:04:52Z-
dc.date.available2024-01-13T15:04:52Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/108302-
dc.languageEnglish-
dc.subjectSrBi2Ta2O9-
dc.subjectferroelectric gate-
dc.subjectmemory window-
dc.titleElectrical properties of Pt/SrBi2Ta2O9/ZrO2/Si ferroelectric gate structure-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation12th IEEE International Symposium on Applications of Ferroelectrics, pp.43-
dc.citation.title12th IEEE International Symposium on Applications of Ferroelectrics-
dc.citation.startPage43-
dc.citation.endPage43-
dc.citation.conferencePlaceUS-
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