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Electrical properties of Pt/SrBi2Ta2O9/ZrO2/Si ferroelectric gate structure

Authors

최훈상; Kim Yong Tae; 김은홍; 최인훈

Citation

12th IEEE International Symposium on Applications of Ferroelectrics, pp.43

Keywords

SrBi2Ta2O9; ferroelectric gate; memory window

URI

https://pubs.kist.re.kr/handle/201004/108302

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KIST Conference Paper > Others

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