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dc.contributor.author김익수-
dc.contributor.author최재형-
dc.contributor.authorKim, Yong Tae-
dc.contributor.author최인훈-
dc.date.accessioned2024-01-13T15:30:40Z-
dc.date.available2024-01-13T15:30:40Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/108317-
dc.languageEnglish-
dc.subjectYMnO3-
dc.subjectferroelectric gate-
dc.subjectmemory window-
dc.titleAchievment of high memory window of YMnO3/Si gate by thermal treatment in nitrogen ambient-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation12th IEEE International Symposium on Applications of Ferroelectrics, pp.47-
dc.citation.title12th IEEE International Symposium on Applications of Ferroelectrics-
dc.citation.startPage47-
dc.citation.endPage47-
dc.citation.conferencePlaceUS-
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