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dc.contributor.authorKim Yong Tae-
dc.contributor.authorPARK YOUNG KYUN-
dc.contributor.author장호정-
dc.contributor.author김희준-
dc.contributor.authorAkira Yoshida-
dc.date.accessioned2024-01-13T15:31:22Z-
dc.date.available2024-01-13T15:31:22Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/108361-
dc.languageEnglish-
dc.subjectYMnO₃-
dc.titleEffects of Y to Mn ratio on memory window in the YMnO₃ ferroelectic gate-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationThe International Conference on Electrical Engineering 2000, pp.66 - 69-
dc.citation.titleThe International Conference on Electrical Engineering 2000-
dc.citation.startPage66-
dc.citation.endPage69-
dc.citation.conferencePlaceJA-
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