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dc.contributor.authorK.H. Park-
dc.contributor.authorY. Kim-
dc.contributor.authorT.H. Chung-
dc.contributor.authorH.J. Bark-
dc.contributor.authorJ.Y. Yi-
dc.contributor.authorCHOI WON CHEOL-
dc.contributor.authorKIM EUN KYU-
dc.date.accessioned2024-01-13T16:02:32Z-
dc.date.available2024-01-13T16:02:32Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/108715-
dc.languageEnglish-
dc.subjectnanocrystal Si-
dc.subjection-beam-assisted electron beam deposition-
dc.subjectTEM-
dc.titleElectrical and structural properties of Si nanocrystals prepared by ion-beam-assisted electron beam deposition-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAbstracts of 10th Seoul Inter. Symp. on Phys. of semicon. and Appl., pp.149-
dc.citation.titleAbstracts of 10th Seoul Inter. Symp. on Phys. of semicon. and Appl.-
dc.citation.startPage149-
dc.citation.endPage149-
dc.citation.conferencePlaceKO-
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