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dc.contributor.author박세기-
dc.contributor.authorPark Young Ju-
dc.contributor.author박영민-
dc.contributor.authorKIM HEO JEN-
dc.contributor.authorKIM EUN KYU-
dc.contributor.author이천-
dc.date.accessioned2024-01-13T16:02:32Z-
dc.date.available2024-01-13T16:02:32Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/108716-
dc.languageEnglish-
dc.subjectinserting layer-
dc.subjectquantum dots-
dc.subjectred-shift-
dc.subjectactivation energy-
dc.titleEffects of AlGaAs inserting layer on the optical properties of InGaAs/GaAs quantum dots-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationAbstracts of 10th Seoul Inter. Symp. on Phys. of Semicon. and Appl., pp.253 - 254-
dc.citation.titleAbstracts of 10th Seoul Inter. Symp. on Phys. of Semicon. and Appl.-
dc.citation.startPage253-
dc.citation.endPage254-
dc.citation.conferencePlaceKO-
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