Effects of AlGaAs inserting layer on the optical properties of InGaAs/GaAs quantum dots

Authors
박세기Park Young Ju박영민KIM HEO JENKIM EUN KYU이천
Citation
Abstracts of 10th Seoul Inter. Symp. on Phys. of Semicon. and Appl., pp.253 - 254
Keywords
inserting layer; quantum dots; red-shift; activation energy
URI
https://pubs.kist.re.kr/handle/201004/108716
Appears in Collections:
KIST Conference Paper > Others
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