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dc.contributor.author신동석-
dc.contributor.author최훈상-
dc.contributor.authorHo Nyung Lee-
dc.contributor.authorKim Yong Tae-
dc.contributor.authorPARK YOUNG KYUN-
dc.contributor.author최인훈-
dc.date.accessioned2024-01-13T17:01:19Z-
dc.date.available2024-01-13T17:01:19Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/109174-
dc.languageEnglish-
dc.subjectpost-annealing-
dc.subjectPt/SBT interface-
dc.subjectBi-Pt alloy-
dc.titleThe changes of the properties of Pt/SrBi2Ta2O9/Pt capacitors and Pt/SrBi2Ta2O9/CeO2/Si structures by post-annealing and their origin-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationThe 3rd Korea-Japan Conference on Ferroelectrics, pp.15-
dc.citation.titleThe 3rd Korea-Japan Conference on Ferroelectrics-
dc.citation.startPage15-
dc.citation.endPage15-
dc.citation.conferencePlaceKO-
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KIST Conference Paper > Others
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