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dc.contributor.author김익수-
dc.contributor.authorHo Nyung Lee-
dc.contributor.authorKim Yong Tae-
dc.contributor.author최인훈-
dc.date.accessioned2024-01-13T18:00:57Z-
dc.date.available2024-01-13T18:00:57Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/109680-
dc.languageEnglish-
dc.subjectYMnO3-
dc.subjectrapid thermal annealing-
dc.subjectferroelectric gate-
dc.subjectmemory window-
dc.titleEffect of rapid thermal annealing on the memory window of ferroelectric YMnO3 thin films deposited on Si substrates-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitation한국물리학회 회보, Bulletin of the Korean Physical Society, v.17, no.2, pp.370-
dc.citation.title한국물리학회 회보, Bulletin of the Korean Physical Society-
dc.citation.volume17-
dc.citation.number2-
dc.citation.startPage370-
dc.citation.endPage370-
dc.citation.conferencePlaceKO-
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