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Effect of rapid thermal annealing on the memory window of ferroelectric YMnO3 thin films deposited on Si substrates

Authors

김익수; Ho Nyung Lee; Kim Yong Tae; 최인훈

Citation

한국물리학회 회보, Bulletin of the Korean Physical Society, v.17, no.2, pp.370

Keywords

YMnO3; rapid thermal annealing; ferroelectric gate; memory window

URI

https://pubs.kist.re.kr/handle/201004/109680

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KIST Conference Paper > Others

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