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dc.contributor.author이희택-
dc.contributor.authorChoi Won Jun-
dc.contributor.authorWoo Deok Ha-
dc.contributor.authorKim Sun Ho-
dc.contributor.authorKANG KWANG NHAM-
dc.contributor.author조재원-
dc.date.accessioned2024-01-13T18:03:21Z-
dc.date.available2024-01-13T18:03:21Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/109828-
dc.languageEnglish-
dc.subject양자우물무질서-
dc.titleEffect of dielectric-semiconductor capping layer combinations on impurity free vacancy disordering of InGaAs/InGaAsP single quantum well structure.-
dc.title.alternativeInGaAs/InGaAsP 단일양자우물구조의 impurity free vacancy intermixing 에서 유전체 - 반도체 덮개층 조합 효과 =-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitation제 6 회 광전자공학 학술회의 논문집, pp.111 - 112-
dc.citation.title제 6 회 광전자공학 학술회의 논문집-
dc.citation.startPage111-
dc.citation.endPage112-
dc.citation.conferencePlaceKO-
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