Full metadata record
| DC Field | Value | Language | 
|---|---|---|
| dc.contributor.author | 이희택 | - | 
| dc.contributor.author | Choi Won Jun | - | 
| dc.contributor.author | Woo Deok Ha | - | 
| dc.contributor.author | Kim Sun Ho | - | 
| dc.contributor.author | KANG KWANG NHAM | - | 
| dc.contributor.author | 조재원 | - | 
| dc.date.accessioned | 2024-01-13T18:03:21Z | - | 
| dc.date.available | 2024-01-13T18:03:21Z | - | 
| dc.date.created | 2021-09-29 | - | 
| dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/109828 | - | 
| dc.language | English | - | 
| dc.subject | 양자우물무질서 | - | 
| dc.title | Effect of dielectric-semiconductor capping layer combinations on impurity free vacancy disordering of InGaAs/InGaAsP single quantum well structure. | - | 
| dc.title.alternative | InGaAs/InGaAsP 단일양자우물구조의 impurity free vacancy intermixing 에서 유전체 - 반도체 덮개층 조합 효과 = | - | 
| dc.type | Conference | - | 
| dc.description.journalClass | 2 | - | 
| dc.identifier.bibliographicCitation | 제 6 회 광전자공학 학술회의 논문집, pp.111 - 112 | - | 
| dc.citation.title | 제 6 회 광전자공학 학술회의 논문집 | - | 
| dc.citation.startPage | 111 | - | 
| dc.citation.endPage | 112 | - | 
| dc.citation.conferencePlace | KO | - | 
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