MOCVD growth of AlN, GaN/Si using an N-atom source based on a dielect barrier discharge method

Authors
KIM JIN SANGKum Dong Wha이지화
Citation
Proc. 2nd Intern. Symp. on blue laser and light emitting diodes, Chiba, Japan, Sept. 29-Oct. 2, 1998, pp.476 - 479
Keywords
MOCVD
URI
https://pubs.kist.re.kr/handle/201004/109929
Appears in Collections:
KIST Conference Paper > Others
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