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dc.contributor.author이정욱-
dc.contributor.author백호선-
dc.contributor.author유지범-
dc.contributor.authorKim Gyeung Ho-
dc.contributor.authorKum Dong Wha-
dc.date.accessioned2024-01-13T19:02:38Z-
dc.date.available2024-01-13T19:02:38Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/110320-
dc.languageEnglish-
dc.subjectHVPE-
dc.titleGrowth of thick GaN with GaN buffer layer on the various substrates using HVPE-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationAbst. the 9th Seoul international symposium on the physics of semiconductors and applications (ISPSA, pp.110-
dc.citation.titleAbst. the 9th Seoul international symposium on the physics of semiconductors and applications (ISPSA-
dc.citation.startPage110-
dc.citation.endPage110-
dc.citation.conferencePlaceKO-
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