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dc.contributor.authorJewon Kim-
dc.contributor.authorSON CHANG-SIK-
dc.contributor.author심선일-
dc.contributor.author최인훈-
dc.contributor.authorPARK YOUNG KYUN-
dc.contributor.authorKim Yong Tae-
dc.contributor.authorO. Ambacher-
dc.contributor.authorM. Stutzmann-
dc.date.accessioned2024-01-13T19:04:38Z-
dc.date.available2024-01-13T19:04:38Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/110444-
dc.languageEnglish-
dc.subjectAbsorption Properties-
dc.subjectAlGaN-
dc.subjectGallium Nitride-
dc.subjectmolecular beam epitaxy-
dc.titleAbsorption properties of the epitaxial Alx-Ga1-xN grown by plasma induced molecular beam epitaxy-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitation한국물리학회 회보 = Bulletin of the Korean Physical Society, v.16, no.2, pp.471-
dc.citation.title한국물리학회 회보 = Bulletin of the Korean Physical Society-
dc.citation.volume16-
dc.citation.number2-
dc.citation.startPage471-
dc.citation.endPage471-
dc.citation.conferencePlaceKO-
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