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dc.contributor.authorChoi Won Jun-
dc.contributor.author한상민-
dc.contributor.authorS.I. Shah-
dc.contributor.authorCHOI SUKGEUN-
dc.contributor.authorWoo Deok Ha-
dc.contributor.authorLee Seok-
dc.contributor.authorKIM HWE JONG-
dc.contributor.authorHan Il Ki-
dc.contributor.authorLee Jung Il-
dc.contributor.authorKANG KWANG NHAM-
dc.contributor.author조재원-
dc.date.accessioned2024-01-13T19:31:37Z-
dc.date.available2024-01-13T19:31:37Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/110528-
dc.languageEnglish-
dc.subjectQuantum well disordering-
dc.subjectHydogen content in capping layer-
dc.subjectPhotonic Interated circuit-
dc.titleReduced Al-Ga interdiffusion in GaAs/AlGaAs multiple quantum well structure by introducing low hydrogen content SiN//x capping layer for dielectric cap quantum well disordering-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationMaterials Research Society Symposium, v.484, pp.419 - 424-
dc.citation.titleMaterials Research Society Symposium-
dc.citation.volume484-
dc.citation.startPage419-
dc.citation.endPage424-
dc.citation.conferencePlaceUS-
dc.identifier.wosid000073983400057-
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