DSpace at KIST: Fabrication of metal-ferroelectric-insulator-semiconductor field effect transistor (MEFISFET) using Pt-SrBi//2Ta//2O//9-Y//2O//3-Si structure

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DC Field	Value	Language
dc.contributor.author	Ho Nyung Lee	-
dc.contributor.author	Kim Yong Tae	-
dc.contributor.author	이창우	-
dc.contributor.author	임명호	-
dc.contributor.author	T. S. Kalkur	-
dc.date.accessioned	2024-01-13T19:33:21Z	-
dc.date.available	2024-01-13T19:33:21Z	-
dc.date.created	2021-09-29	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/110644	-
dc.language	English	-
dc.subject	MEFISFET	-
dc.title	Fabrication of metal-ferroelectric-insulator-semiconductor field effect transistor (MEFISFET) using Pt-SrBi//2Ta//2O//9-Y//2O//3-Si structure	-
dc.type	Conference	-
dc.description.journalClass	1	-
dc.identifier.bibliographicCitation	Proc. of solid state devices and materials, pp.382 - 383	-
dc.citation.title	Proc. of solid state devices and materials	-
dc.citation.startPage	382	-
dc.citation.endPage	383	-
dc.citation.conferencePlace	JA	-

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