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dc.contributor.author한철구-
dc.contributor.author김광무-
dc.contributor.author정석구-
dc.contributor.author최범호-
dc.contributor.authorKIM EUN KYU-
dc.contributor.authorMin Suk-Ki-
dc.contributor.authorPARK JEONG HO-
dc.date.accessioned2024-01-13T20:04:01Z-
dc.date.available2024-01-13T20:04:01Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/110936-
dc.languageEnglish-
dc.subjectin-plane gated transistor-
dc.subjectelectron beam lithography-
dc.subjectHEMT-
dc.subjectMBE-
dc.titleFabrication of in-plane gated transistor with electron-beam lighography technique-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationProc. 4th Korean conf. semiconductors., pp.437 - 438-
dc.citation.titleProc. 4th Korean conf. semiconductors.-
dc.citation.startPage437-
dc.citation.endPage438-
dc.citation.conferencePlaceKO-
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