DSpace at KIST: Characteristics of amorphous Ta-Si-N thin film for Cu metallization

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DC Field	Value	Language
dc.contributor.author	김동준	-
dc.contributor.author	정순필	-
dc.contributor.author	Kim Yong Tae	-
dc.contributor.author	Min Suk-Ki	-
dc.contributor.author	박종완	-
dc.date.accessioned	2024-01-13T20:04:11Z	-
dc.date.available	2024-01-13T20:04:11Z	-
dc.date.created	2021-09-29	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/110945	-
dc.language	English	-
dc.subject	Ta-Si-N	-
dc.subject	Cu metallization	-
dc.subject	amorphous	-
dc.subject	diffusion barrier	-
dc.title	Characteristics of amorphous Ta-Si-N thin film for Cu metallization	-
dc.title.alternative	구리금속배선을 위한 비정질 Ta-Si-N 박막의 특성	-
dc.type	Conference	-
dc.description.journalClass	2	-
dc.identifier.bibliographicCitation	제4회 한국 반도체 학술대회 (The 4th Korean conference on semiconductors) 논문집, pp.373 - 374	-
dc.citation.title	제4회 한국 반도체 학술대회 (The 4th Korean conference on semiconductors) 논문집	-
dc.citation.startPage	373	-
dc.citation.endPage	374	-
dc.citation.conferencePlace	KO	-

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