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dc.contributor.authorKIM JONG WOOK-
dc.contributor.author강현일-
dc.contributor.author오재응-
dc.contributor.authorKIM HWE JONG-
dc.contributor.authorChoi Won Jun-
dc.contributor.authorLee Seok-
dc.contributor.authorHan Il Ki-
dc.contributor.authorWoo Deok Ha-
dc.contributor.authorLee Jung Il-
dc.contributor.authorKim Sun Ho-
dc.contributor.authorKANG KWANG NHAM-
dc.date.accessioned2024-01-13T21:01:44Z-
dc.date.available2024-01-13T21:01:44Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/111321-
dc.languageEnglish-
dc.subjectHBT-
dc.subjectInAlAs/InGaAs-
dc.subject광특성-
dc.titleThe characteristics of In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistors illuminated by laser-
dc.title.alternative레이저에 의해 조사된 In0.52Al0.48As/In0.53Ga0.47As HBT의 특성-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitation제 4 회 한국 반도체 학술대회 논문집, pp.105 - 106-
dc.citation.title제 4 회 한국 반도체 학술대회 논문집-
dc.citation.startPage105-
dc.citation.endPage106-
dc.citation.conferencePlaceKO-
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