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dc.contributor.authorKIM EUN KYU-
dc.contributor.authorS.I. Kim-
dc.contributor.authorM.S. Kim-
dc.contributor.authorY. Kim-
dc.contributor.authorS.M. Hwang-
dc.contributor.authorB.D. Min-
dc.contributor.authorC.S. Son-
dc.contributor.authorMin Suk-Ki-
dc.date.accessioned2024-01-13T21:02:45Z-
dc.date.available2024-01-13T21:02:45Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/111381-
dc.languageEnglish-
dc.subjectlateral growth rate-
dc.titleEnhancement of lateral growth rate during MOCVD growth on patterned GaAs substrates with CBr//4.-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationDigest of Papers on the 9th Int'l Micro-process Conference., pp.116 - 169-
dc.citation.titleDigest of Papers on the 9th Int'l Micro-process Conference.-
dc.citation.startPage116-
dc.citation.endPage169-
dc.citation.conferencePlaceJA-
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