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dc.contributor.authorJu Byeong Kwon-
dc.contributor.authorLEE YUN HI-
dc.contributor.authorOH MYUNG HWAN-
dc.date.accessioned2024-01-13T21:03:48Z-
dc.date.available2024-01-13T21:03:48Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/111445-
dc.languageEnglish-
dc.subjectwafer bonding-
dc.subjectannealing-
dc.subjectelemental semiconductors-
dc.subjectetching-
dc.subjectinterface structure-
dc.subjectmaterials testing-
dc.subjectsemiconductor-insulator boundaries-
dc.subjectsilicon-
dc.subjectwafer bonding-
dc.titleStatus and new evaluation method of interfacial oxide between directly-bonded Si wafer pairs-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationIEEE MEMS '96, San Diego, USA., pp.337 - 342-
dc.citation.titleIEEE MEMS '96, San Diego, USA.-
dc.citation.startPage337-
dc.citation.endPage342-
dc.citation.conferencePlaceUS-
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