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The effect of substrate surface morphology on GaN by MOCVD.

Authors

Kum Dong Wha; Byun Dongjin; Kim Gyeung Ho

Citation

The 8th Seoul international symposium on the physics of semiconductors and applications, pp.?

URI

https://pubs.kist.re.kr/handle/201004/111571

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KIST Conference Paper > Others

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