DSpace at KISTKIST Conference PaperOthers

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dc.contributor.authorKANG KWANG NHAM-
dc.contributor.authorKIM HWE JONG-
dc.contributor.authorW. J. Choi-
dc.contributor.authorLee Seok-
dc.contributor.authorD. Woo-
dc.contributor.authorHan Il Ki-
dc.contributor.authorS. K. Kim-
dc.contributor.authorS. H. Kim-
dc.contributor.authorLee Jung Il-
dc.date.accessioned2024-01-13T21:32:59Z-
dc.date.available2024-01-13T21:32:59Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/111680-
dc.languageEnglish-
dc.subject양자우물 무질서화-
dc.titleDielectric cap disordering of InGaAs/InP quantum well by PECVD grown SiN and SiO2.-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationISIST '96(International symposium on information science and technology), pp.61 - 63-
dc.citation.titleISIST '96(International symposium on information science and technology)-
dc.citation.startPage61-
dc.citation.endPage63-
dc.citation.conferencePlaceCC-
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