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dc.contributor.authorKim Yong Tae-
dc.contributor.authorC. S. Kwon-
dc.contributor.authorD. J. Kim-
dc.contributor.authorJ. Y. Lee-
dc.contributor.authorI. H. Choi-
dc.date.accessioned2024-01-13T22:00:49Z-
dc.date.available2024-01-13T22:00:49Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/111809-
dc.languageEnglish-
dc.titleThe properties of nitrogen implanted tungsten diffusion barrier for Cu metallization.-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationProc. of the 2nd Korea-China symp. on ion beam modification of materials and thin film materials, pp.?-
dc.citation.titleProc. of the 2nd Korea-China symp. on ion beam modification of materials and thin film materials-
dc.citation.startPage?-
dc.citation.endPage?-
dc.citation.conferencePlaceKO-
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