DSpace at KIST: Solid-phase epitaxial regrowth and dopant activation of arsenic-implanted metastable pseudomorphic Ge0.08Si0.92 and Ge0.16Si0.84 on Si(100)

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DC Field	Value	Language
dc.contributor.author	D.Y.C. Lie	-
dc.contributor.author	SONG JONG HAN	-
dc.contributor.author	M.-A. Nicolet	-
dc.contributor.author	M.O. Tanner	-
dc.contributor.author	S. Thomas	-
dc.contributor.author	K.L. Wang	-
dc.date.accessioned	2024-01-13T22:02:56Z	-
dc.date.available	2024-01-13T22:02:56Z	-
dc.date.created	2021-09-29	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/111934	-
dc.language	English	-
dc.title	Solid-phase epitaxial regrowth and dopant activation of arsenic-implanted metastable pseudomorphic Ge0.08Si0.92 and Ge0.16Si0.84 on Si(100)	-
dc.type	Conference	-
dc.description.journalClass	1	-
dc.identifier.bibliographicCitation	Material Research Society Symposium Proceedings, v.379, pp.467 - 472	-
dc.citation.title	Material Research Society Symposium Proceedings	-
dc.citation.volume	379	-
dc.citation.startPage	467	-
dc.citation.endPage	472	-
dc.citation.conferencePlace	US	-

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