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dc.contributor.authorSON CHANG-SIK-
dc.contributor.authorKim Seong Il-
dc.contributor.authorKIM YOUN-
dc.contributor.authorLEE MIN-SUK-
dc.contributor.authorMin Suk-Ki-
dc.contributor.authorKIM MOO SUNG-
dc.contributor.author최인훈-
dc.date.accessioned2024-01-13T23:00:54Z-
dc.date.available2024-01-13T23:00:54Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/112347-
dc.languageEnglish-
dc.subjectcarbon-
dc.subjectdoping-
dc.subjectInGaAs-
dc.subjectCCl4-
dc.subjectMOCVD-
dc.titleCarbon doping properties of InGaAs grown by atmospheric pressure MOVPE using CCl//4.-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationBulletin of the Korean physical society, v.v. 11, no.no. 2, pp.356 - ?-
dc.citation.titleBulletin of the Korean physical society-
dc.citation.volumev. 11-
dc.citation.numberno. 2-
dc.citation.startPage356-
dc.citation.endPage?-
dc.citation.conferencePlaceKO-
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