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Carbon doping properties of InGaAs grown by atmospheric pressure MOVPE using CCl//4.

Authors

SON CHANG-SIK; Kim Seong Il; KIM YOUN; LEE MIN-SUK; Min Suk-Ki; KIM MOO SUNG; 최인훈

Citation

Bulletin of the Korean physical society, v.v. 11, no.no. 2, pp.356 - ?

Keywords

carbon; doping; InGaAs; CCl4; MOCVD

URI

https://pubs.kist.re.kr/handle/201004/112347

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KIST Conference Paper > Others

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