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Carbon doping characteristics of GaAs and Al//0//.//3Ga//0//.//7As using CCl//4 grown by atmospheric pressure MOCVD.

Authors

SON CHANG-SIK; Kim Seong Il; KIM YOUN; LEE MIN-SUK; KIM MOO SUNG; Min Suk-Ki; 곽명현; 마동성

Citation

Bulletin of the Korean physical society, v.v. 11, no.no. 2, pp.342 - ?

Keywords

carbon; doping; CCl//4; MOCVD

URI

https://pubs.kist.re.kr/handle/201004/112348

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KIST Conference Paper > Others

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