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dc.contributor.authorKim Seong Il-
dc.contributor.authorEOM KYUNG SOOK-
dc.contributor.authorKIM YOUN-
dc.contributor.authorKIM MOO SUNG-
dc.contributor.authorMin Suk-Ki-
dc.contributor.author곽명현-
dc.contributor.author마동성-
dc.date.accessioned2024-01-13T23:31:34Z-
dc.date.available2024-01-13T23:31:34Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/112655-
dc.languageEnglish-
dc.subjectMOCVD-
dc.subjectGaAs-
dc.subjectcarbon-
dc.subjectcritical layer-
dc.titleCharacteristics of C-doped GaAs and critical layer thickness.-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationInternational symposium on the physics of semiconductor and its applications, pp.364 - ?-
dc.citation.titleInternational symposium on the physics of semiconductor and its applications-
dc.citation.startPage364-
dc.citation.endPage?-
dc.citation.conferencePlaceKO-
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