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Characteristics of C-doped GaAs and critical layer thickness.

Authors

Kim Seong Il; EOM KYUNG SOOK; KIM YOUN; KIM MOO SUNG; Min Suk-Ki; 곽명현; 마동성

Citation

International symposium on the physics of semiconductor and its applications, pp.364 - ?

Keywords

MOCVD; GaAs; carbon; critical layer

URI

https://pubs.kist.re.kr/handle/201004/112655

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KIST Conference Paper > Others

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