DSpace at KIST: Fabrication and dc characterization of submicron gate GaAs MESFET.

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DC Field	Value	Language
dc.contributor.author	KANG KWANG NHAM	-
dc.date.accessioned	2024-01-13T23:34:29Z	-
dc.date.available	2024-01-13T23:34:29Z	-
dc.date.created	2021-09-29	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/112826	-
dc.language	English	-
dc.subject	GaAs	-
dc.subject	MESFET	-
dc.title	Fabrication and dc characterization of submicron gate GaAs MESFET.	-
dc.type	Conference	-
dc.description.journalClass	2	-
dc.identifier.bibliographicCitation	Proc. Korean electronics eng., v.v. 9, no.no. 2, pp.145 - ?	-
dc.citation.title	Proc. Korean electronics eng.	-
dc.citation.volume	v. 9	-
dc.citation.number	no. 2	-
dc.citation.startPage	145	-
dc.citation.endPage	?	-
dc.citation.conferencePlace	KO	-

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