Two-Dimensional van der Waals Material PdPSe: Investigation on Electrical Transport

Abstract

The unique puckered pentagonal structure of the layeredsemiconductormaterial palladium phosphorus selenide (PdPSe) has gathered attention,but its electronic performance has not been thoroughly investigated.In this study, PdPSe is synthesized via chemical vapor transport,and its thickness-dependent electrical properties are examined from1.4 to 309 nm via the field-effect transistor (FET) measurement. Thematerial exhibits n-type semiconducting behavior, with relativelyhigh mobility observed at a specific thickness range, reaching upto 4.9 cm(2) V-1 s(-1) witha maximum on/off ratio of 2.86 x 10(8) at a V (ds) of 1 V. The transport mechanism is analyzedby calculating the Schottky barrier height (SBH) using a thermionicemission model. Temperature-dependent analysis revealed that the devicehas a minuscule SBH and the PdPSe FET device follows the Fowler-Nordheimtunneling model. Through drain-voltage-dependent FET characteristicanalysis, an improvement in carrier mobility up to 33 cm(2) V-1 s(-1) is observed at a highdrain voltage of 10 V. These findings provide fundamental insightsinto the performance of PdPSe FETs and their potential use in next-generationelectronic applications based on two-dimensional (2D) materials.