DSpace at KISTKIST Article2023

Full metadata record

DC Field Value Language
dc.contributor.authorShin, Wonjun-
dc.contributor.authorKim, Sangwoo-
dc.contributor.authorKoo, Ryun-Han-
dc.contributor.authorKwon, Dongseok-
dc.contributor.authorKim, Jae-Joon-
dc.contributor.authorKwon, Deok-Hwang-
dc.contributor.authorKwon, Daewoong-
dc.contributor.authorLee, Jong-Ho-
dc.date.accessioned2024-01-19T09:30:55Z-
dc.date.available2024-01-19T09:30:55Z-
dc.date.created2023-07-06-
dc.date.issued2023-06-
dc.identifier.issn0741-3106-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/113651-
dc.description.abstractIn this study, we explore the low-frequency noise (LFN) characteristics of hafnium-zirconium ferroelectric junctionless poly-Si thin-film transistors (FE JL TFTs) with different channel lengths (Ls). The findings reveal that the magnitude of 1/f noise decreases with a decrease in L, exhibiting the opposite trend from that of conventional FETs. Additionally, it is observed that the protrusion of poly-Si is more susceptible to damage from tensile stress during post-metal annealing in devices with longer L.-
dc.languageEnglish-
dc.publisherInstitute of Electrical and Electronics Engineers-
dc.titleChannel-Length-Dependent Low-Frequency Noise Characteristics of Ferroelectric Junctionless Poly-Si Thin-Film Transistors-
dc.typeArticle-
dc.identifier.doi10.1109/LED.2023.3267134-
dc.description.journalClass1-
dc.identifier.bibliographicCitationIEEE Electron Device Letters, v.44, no.6, pp.1003 - 1006-
dc.citation.titleIEEE Electron Device Letters-
dc.citation.volume44-
dc.citation.number6-
dc.citation.startPage1003-
dc.citation.endPage1006-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid001001401500032-
dc.identifier.scopusid2-s2.0-85153494520-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalResearchAreaEngineering-
dc.type.docTypeArticle-
dc.subject.keywordPlusNANOWIRE TRANSISTORS-
dc.subject.keywordAuthorChannel length-
dc.subject.keywordAuthor1/f noise-
dc.subject.keywordAuthorferroelectric junctionless thin-film transistor (FE JL TFT)-
dc.subject.keywordAuthorlow-frequency noise (LFN)-
Appears in Collections:
KIST Article > 2023
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML
Show Simple Item Record

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE