Valence State and Co-ordination of Implanted Ions in MgO

Abstract

MgO thin films are grown on Si(100)-substrate by radio frequency (RF) sputtering technique and then implanted with transition metal (TM) ions i.e. Co, Cu and Ni. The ion implantation is performed at 100 keV with five fluences of 1 x 10(15) (1E15), 5 x 10(15) (5E15), 1 x 10(16) (1E16), 2.5 x 10(16) (2.5E16) and 5 x 10(16) (5E16) ions/cm(2), respectively. Stopping and Range of Ions in Matter (SRIM) calculations and Transport of Ions in Matter (TRIM) simulations are performed to estimate the doping concentration, average vacancy/ion, projected range etc. for implanted ions. These calculations are further crosschecked using high resolution transmission electron microscopy (HRTEM) studies. X-ray absorption spectroscopy (XAS) measurements performed at metal K and L-3,L-2-edges reveal the valance state, co-ordination number to explore the electronic structure of modified MgO matrix.