DSpace at KISTKIST Conference Paper2019

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dc.contributor.authorGeum, Dae-Myeong-
dc.contributor.authorKim, SangHyeon-
dc.contributor.authorKim, SeongKwang-
dc.contributor.authorYoon, Euijoon-
dc.contributor.authorKylun, JiHoon-
dc.contributor.authorSong, Jindong-
dc.contributor.authorChoi, Won Jun-
dc.contributor.authorKang, SooSeok-
dc.date.accessioned2024-01-19T10:08:22Z-
dc.date.available2024-01-19T10:08:22Z-
dc.date.created2022-02-28-
dc.date.issued2019-06-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/114085-
dc.description.abstractMulticolor photodetectors (PDs) by using bulk p-i-n based visible GaAs and near-infrared (IR) InGaAs PD have been successfully fabricated via monolithic integration by wafer bonding and epitaxial lift-off. It showed high-performance individual operation comparable to that of bulk PDs with tight vertical alignment on a single substrate future high-resolution multicolor PDs. At the same time, it covered broad wavelength range from visible to IR.-
dc.languageEnglish-
dc.publisherIEEE-
dc.titleMonolithic integration of GaAs//InGaAs photodetectors for multicolor detection-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation39th Symposium on VLSI Technology / 33rd Symposium on VLSI Circuits, pp.T248 - T249-
dc.citation.title39th Symposium on VLSI Technology / 33rd Symposium on VLSI Circuits-
dc.citation.startPageT248-
dc.citation.endPageT249-
dc.citation.conferencePlaceUS-
dc.citation.conferencePlaceKyoto, JAPAN-
dc.citation.conferenceDate2019-06-09-
dc.relation.isPartOf2019 SYMPOSIUM ON VLSI TECHNOLOGY-
dc.identifier.wosid000555822600045-
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KIST Conference Paper > 2019
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